lueti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. mechanical data dimensions in mm (inches) ? 5.64 (0.230)^ 4.95(0.195) 048(0.019) 0.41 (0.018) jj] ' j u 2.5410.100). bc107 bc108 BC109 telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 general purpose small signal npn bipolar transistor features ? silicon npn ? hermetically sealed to18 ? screening options available to-18 metal package underside view pin 1 - emitter pin 2 - base pin 3 - collector absolute maximum ratings (ta - 25c unless otherwise stated) vcbo collector-base continuous voltage bc017 bc108, BC109 vceo collector - emitter continuous voltage with zero base current bc107 bc108, BC109 vces collector - emitter continuous voltage with base shortcircuited to emitter bc107 bc108, BC109 vebo emitter - base continuous voltage reverse voltage bc107 bc108, BC109 lc continuous collector current icm peak collector current ptot power dissipation @ tamb = 25c tamb ambient operating temperature range tstg storage temperature range 50v 30v 45v 20v 50v 30v 6v 5v 100ma 200ma soomw -65to+175c -65to+175c nj semi-conductors reserves the right to change test eonditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
bc107 bc108 BC109 electrical characteristics (ta = 25c unless otherwise stated) parameter 'ceo(i) collector-base leakage current lceo(i) collector-emitter leakage current @tamb=125c iebo emitter cut-off current h2ie static forward current transfer ratio vbe base - emitter breakdown vbe(sat)(i) base - emitter saturation voltage \/ce(sat)(i) collector - emitter saturation voltage ft transition frequency f noise factor n2ie small signal forward current transfer ratio i11e common emitter input impedance n22e common emitter output admittance c22b common base output capacitance ^th(j-amb) thermal resistance: junction to ? ambient test conditions vcb=45v bc107 vcb = 25v bc108, BC109 vcb=45v bc107 vcb=25v bc108, BC109 veb=4v lc = 0 vce = 5v lc = 2ma group a bc107, bc108 group b all types group c bc108, BC109 bc107 bc108 BC109 vce = 5v lc = 2ma ib= 0.5ma lc=10ma ib= 0.5ma lc=10ma vce = 5v 10= 10ma f=100mhz vce = 5v ic= 0.2ma r = 2kij f=1khz af=200hz BC109 bc107, bc108 vce - 5v lc = 2ma f -100khz group a bc107, bc108 group b all types group c bc108, BC109 bc107 bc108 BC109 vce = 5vlc = 2maf=1khz group a bc107, bc108 group b all types group c bc108, BC109 vce=5vlc = 2maf= 1khz group a bc107, bc108 group b all types group c bc108, BC109 vcb=10v f=1mhz min. 110 180 380 110 110 180 150 125 240 450 125 125 240 1.6 3.2 6.0 typ. max. 15 15 4 4 1 220 460 800 460 800 800 0.7 0.83 0.25 ! 4 i i 10 i 260 500 ; 900 500 900 900 4.5 : 8.5 15 30 ; 60 110 6 500 unit na ma ma v v v mhz db kq ms pf c/w
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